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| MMDT3904 DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N3904 NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. 4 5 6 2 1 3 SOT- 363 FEATURES Electrically Isolated Dual NPN Switching Transistor Lead-Free Plating (100% matte tin finish) 6 5 4 APPLICATIONS General Purpose Amplifier Applications Hand-Held Computers, PDAs Device Marking Code: S1A 1 2 3 MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1) TJ = 25C Unless otherwise noted Symbol VCBO V CEO VEB IC PD TJ Tstg Value 60 40 6.0 200 200 -55 to +150 -55 to +150 Units V V V mA mW C C Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout 9/20/2005 Page 1 www.panjit.com MMDT3904 ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25C Unless otherwise noted Parameter Symbol Conditions Min 40 60 6.0 40 70 100 60 30 0.65 300 Typ Max 50 50 300 0.2 0.3 0.85 0.95 4.0 8.0 35 35 200 50 V V V MHz pF pF ns ns ns ns Units V V V nA nA Collector-Emitter Breakdown Voltage V (BR)CEO I C = 1.0mA Collector-Base Breakdown Voltage V (BR)CBO I C = 10uA Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V (BR)EBO I E = 10uA ICEX IBL VCE= 30V, V EB 3.0V = VCE= 30V, V EB 3.0V = I C = 0.1mA, V CE= 1.0V I C = 1.0mA, V CE= 1.0V DC Current Gain (Note 2) h FE I C = 10mA, V CE= 1.0V I C = 50mA, V CE 1.0V = I C = 100mA, V CE= 1.0V Collector-Emitter Saturation Voltage (Note 2) Base-Emitter Saturation Voltage (Note 2) Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) fT CCBO CEBO td tr ts tf I C = 10mA, I B= 1.0mA I C = 50mA, I B= 5.0mA I C = 10mA, I B= 1.0mA I C = 50mA, I B= 5.0mA V CE= 20V, I C= 10mA f = 100MHz VCB= 5.0V, f =1.0MHz VEB = 0.5V, f =1.0MHz VCC = 3.0V, I C= 10mA VBE(off) = -0.5V, IB1= -1.0mA V CC= 3.0V, I C= 10mA I B1= I B2= 1.0mA Note 2. Short duration test pulse used to minimize self-heating SWITCHING TIME EQUIVALENT TEST CIRCUITS +3V +3V 275 300ns Duty Cycle ~ 2.0% 275 +10.9V 0 0 -0.5V < 1ns CS* < 4pF -9.1V < 1ns 10K 1N916 10 to 500us Duty Cycle ~ 2.0% CS* < 4pF +10.9V 10K Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit 9/20/2005 Page 2 www.panjit.com MMDT3904 CHARACTERISTICS CURVES (Each Transistor) TJ = 25C Unless otherwise noted 300 250 200 hFE 150 TJ = 25 C 100 50 0 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) TJ = 150 C VCE = 1V 1.400 1.200 1.000 TJ = 100 C VBE (V) 0.800 TJ = 25 C 0.600 0.400 0.200 0.000 0.01 0.1 1 TJ = 150 TJ = 100 C VCE = 1V 10 100 1000 Collector Current, IC (mA) Fig. 1. hFE vs. Ic 1.000 Fig. 2. VBE vs. Ic 1.0 TJ = 25 C IC/IB = 10 TJ = 150 C TJ = 100 C VCE(sat) (V) 0.100 TJ = 25 C VBE(sat) (V) TJ = 150 C IC/IB = 10 0.010 0.01 0.1 1 10 100 1000 Collector Current, IC (mA) 0.1 0.01 0.1 1 Collector Current, IC (mA) 10 100 Fig. 3. VCE(sat) vs. Ic 10 Fig. 4. VBE(sat) vs. Ic TJ = 25 C CIB (EB) Capacitance (pF) COB (CB) 1 0.1 1 10 100 Reverse Voltage, VR (V) Fig. 5. Capacitances 9/20/2005 Page 3 www.panjit.com MMDT3904 PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION MMDT3904 T/R7 - 3,000 units per 7 inch reel MMDT3904 T/R13 -10,000 units per 13 inch reel Copyright PanJit International, Inc 2005 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 9/20/2005 Page 4 www.panjit.com |
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